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AOB288L Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited

Teile-Nr. AOB288L
Beschreibung  isc N-Channel MOSFET Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

AOB288L Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited

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isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
AOB288L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage
VGS=0V; ID = 250μA
80
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID = 250μA
2.3
3.4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 20A
8.9
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
±100
nA
IDSS
Drain-Source Leakage Current
VDS= 80V; VGS= 0V
VDS= 80V; VGS= 0V;TJ= 55℃
1
5
μ
A
VSD
Diode forward voltage
Is= 1A; VGS = 0V
1
V
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.


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