 |
Datenblatt-Suchmaschine für elektronische Bauteile |
|
|
Datenblatt-Suchmaschine für elektronische Bauteile |
|
AOB292L Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
||||||||||||||||||||||||||||||
AOB292L Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
|
1 / 2 page 
isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor AOB292L · FEATURES · Drain Current –ID= 105A@ TC=25℃ · Drain Source Voltage- : VDSS= 100V(Min) · Static Drain-Source On-Resistance : RDS(on) = 4.1mΩ(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · Be suitable for synchronous rectification for server and general purpose applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 105 A IDM Drain Current-Single Pulsed 420 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.5 ℃ /W |
|
German ▼ 
English
Chinese
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
