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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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PK636BA Datenblatt(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK636BA Datenblatt(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK636BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 20A. A V 4.1 °C / W 30 46 VGS Operating Junction & Storage Temperature Range SYMBOL °C -55 to 150 59 UNITS 120 29 TYPICAL VDS 30 V ID IDM SYMBOL LIMITS TC = 25 °C EAS MAXIMUM Avalanche Current IAS 20 Junction-to-Case RqJC Junction-to-Ambient 2 THERMAL RESISTANCE Avalanche Energy L =0.1mH ID Tc = 25 °C 30V Continuous Drain Current 3 Tc = 100 °C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 8mΩ @V GS = 10V 46A Gate-Source Voltage 20 ±20 Pulsed Drain Current 1 TC = 100 °C Power Dissipation TJ, Tstg PD W mJ 12 RqJA PD W TA = 70 °C 1.3 12 TA= 70 °C 9.7 Power Dissipation TA = 25 °C 2.1 Continuous Drain Current TA = 25 °C ID REV 1.0 1 2014-2-20 |
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