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PK636BA Datenblatt(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

Teile-Nr. PK636BA
Beschreibung  N-Channel Enhancement Mode MOSFET
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Hersteller  UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]
Homepage  http://www.unikc.com.cn/
Logo UNIKC - Wuxi U-NIKC Semiconductor CO.,LTD

PK636BA Datenblatt(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD

  PK636BA Datenblatt HTML 1Page - Wuxi U-NIKC Semiconductor CO.,LTD PK636BA Datenblatt HTML 2Page - Wuxi U-NIKC Semiconductor CO.,LTD PK636BA Datenblatt HTML 3Page - Wuxi U-NIKC Semiconductor CO.,LTD PK636BA Datenblatt HTML 4Page - Wuxi U-NIKC Semiconductor CO.,LTD PK636BA Datenblatt HTML 5Page - Wuxi U-NIKC Semiconductor CO.,LTD  
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PK636BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
THERMAL RESISTANCE RATINGS
UNITS
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 20A.
A
V
4.1
°C / W
30
46
VGS
Operating Junction & Storage Temperature Range
SYMBOL
°C
-55 to 150
59
UNITS
120
29
TYPICAL
VDS
30
V
ID
IDM
SYMBOL
LIMITS
TC = 25 °C
EAS
MAXIMUM
Avalanche Current
IAS
20
Junction-to-Case
RqJC
Junction-to-Ambient
2
THERMAL RESISTANCE
Avalanche Energy
L =0.1mH
ID
Tc = 25 °C
30V
Continuous Drain Current
3
Tc = 100 °C
PARAMETERS/TEST CONDITIONS
RDS(ON)
Drain-Source Voltage
8mΩ @V
GS = 10V
46A
Gate-Source Voltage
20
±20
Pulsed Drain Current
1
TC = 100 °C
Power Dissipation
TJ, Tstg
PD
W
mJ
12
RqJA
PD
W
TA = 70 °C
1.3
12
TA= 70 °C
9.7
Power Dissipation
TA = 25 °C
2.1
Continuous Drain Current
TA = 25 °C
ID
REV 1.0
1
2014-2-20


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