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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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PK636BA Datenblatt(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK636BA Datenblatt(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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PK636BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) MIN TYP MAX 30 1.3 1.8 2.3 ±100 nA 1 10 7.9 12 5.8 8 48 S 745 144 84 3.3 Ω VGS =10V 15.4 VGS =4.5V 8.4 2 4.6 22 19 38 20 25 A 1.2 V 15.7 nS 4.4 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 20A. Drain-Source Breakdown Voltage V IF = 12A, dlF/dt = 100A / μS UNITS Coss Crss VGS = 4.5V, ID = 12A V(BR)DSS TEST CONDITIONS Ciss VDS = 5V, ID = 12A VDS = 0V, VGS = ±20V gfs RDS(ON) Forward Transconductance 1 STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF IDSS Qrr Reverse Recovery Charge Continuous Current 3 Forward Voltage 1 Reverse Recovery Time IS VSD trr IF = 12A, VGS = 0V nS VDS = 15V, ID @ 12A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) td(on) tr td(off) tf Turn-On Delay Time 2 Rise Time 2 Turn-Off Delay Time 2 Fall Time 2 Gate Threshold Voltage Drain-Source On-State Resistance 1 Rg Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) VDS = 15V, VGS = 10V, ID = 12A Gate-Drain Charge 2 Gate-Source Charge 2 Reverse Transfer Capacitance Gate Resistance Qg Total Gate Charge 2 Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 12A VDS = 20V, VGS = 0V, TJ = 55 °C SYMBOL LIMITS REV 1.0 2 2014-2-20 |
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