AO9926B datasheet(3/7 Pages) VBSEMI

Teilenummer	AO9926B

Bauteilbeschribung	Dual N-Channel 20-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

10

20

30

40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VDS - Drain-to-Source Voltage (V)

VGS = 5 V thru 3 V

2 V

1 V, 1.5 V

2.5 V

0.00

0.02

0.04

0.06

0.08

0.10

0

10203040

ID - Drain Current (A)

VGS = 2.5 V

VGS = 4.5 V

0

1

2

3

4

5

0

Qg - Total Gate Charge (nC)

VDS = 10 V

ID = 7.1 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

10

20

30

40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

- 55 °C

25 °C

0

200

400

600

800

1000

04

8

12

16

20

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 4.5 V

ID = 7.1 A

TJ - Junction Temperature (°C)

2

4

6

8

10

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AO9926B

3

Ähnliche Beschreibung - AO9926B

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Vishay Siliconix	SI1912EDH	42Kb / 5P	Dual N-Channel 20-V (D-S) MOSFET Rev. A, 05-Mar-01
	SI1902DL	43Kb / 4P	Dual N-Channel 20-V (D-S) MOSFET Rev. E, 12-Aug-02
	SI5908DC	236Kb / 10P	Dual N-Channel 20 V (D-S) MOSFET Rev. B, 08-Mar-10
	SI9926CDY	255Kb / 10P	Dual N-Channel 20-V (D-S) MOSFET Rev. B, 27-Apr-09
DinTek Semiconductor Co...	DTM9936	307Kb / 9P	Dual N-Channel 20-V (D-S) MOSFET
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Vishay Siliconix	SI1902CDL	236Kb / 11P	Dual N-Channel 20 V (D-S) MOSFET Rev. A, 02-May-11
	SI7904BDN	559Kb / 13P	Dual N-Channel 20-V (D-S) MOSFET Rev. B, 29-Dec-08
	SI1024X	113Kb / 5P	Dual N-Channel 20-V (D-S) MOSFET Rev. C, 24-Mar-08
Guangdong Kexin Industr...	KI5908DC	66Kb / 2P	Dual N-Channel 20-V (D-S) MOSFET
Vishay Siliconix	SI7904DN	88Kb / 5P	Dual N-Channel 20-V (D-S) MOSFET Rev. G, 07-Jul-08

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