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AOD4184A Datenblatt(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Teile-Nr. AOD4184A
Beschreibung  N-Channel 40-V (D-S) MOSFET
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Hersteller  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AOD4184A Datenblatt(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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N-Channel 4 -V (D-S) MOSFET
FEATURES
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
APPLICATIONS
Synchronous Rectification
Power Supplies
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a, c
Qg (Typ.)
4
0.0050 at VGS = 10 V
85
80 nC
0.00
65 at V
GS = 4.5 V
70
N-Channel MOSFET
G
D
S
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. Calculated based on maximum junction temperature. Package limitation current is 110 A.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
4
V
Gate-Source Voltage
VGS
± 2
5
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
ID
85a, c
A
TC = 70 °C
70 c
TA = 25 °C
59b
TA = 70 °C
53b
Pulsed Drain Current
IDM
250
Avalanche Current Pulse
L = 0.1 mH
IAS
80
Single Pulse Avalanche Energy
EAS
320
V
Continuous Source-Drain Diode Current
TC = 25 °C
IS
110a, c
A
TA = 25 °C
2.6b
Maximum Power Dissipation
TC = 25 °C
PD
312a
W
TC = 70 °C
200
TA = 25 °C
3.13b
TA = 70 °C
2.0b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb
Steady State
RthJA
32
40
°C/W
Maximum Junction-to-Case
Steady State
RthJC
0.33
0.4
RoHS
COMPLIANT
0
0
0
TO-252
S
GD
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
AOD4184A
1


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