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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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AOD4184A Datenblatt(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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AOD4184A Datenblatt(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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N-Channel 4 -V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a, c Qg (Typ.) 4 0.0050 at VGS = 10 V 85 80 nC 0.00 65 at V GS = 4.5 V 70 N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. Calculated based on maximum junction temperature. Package limitation current is 110 A. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 4 V Gate-Source Voltage VGS ± 2 5 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID 85a, c A TC = 70 °C 70 c TA = 25 °C 59b TA = 70 °C 53b Pulsed Drain Current IDM 250 Avalanche Current Pulse L = 0.1 mH IAS 80 Single Pulse Avalanche Energy EAS 320 V Continuous Source-Drain Diode Current TC = 25 °C IS 110a, c A TA = 25 °C 2.6b Maximum Power Dissipation TC = 25 °C PD 312a W TC = 70 °C 200 TA = 25 °C 3.13b TA = 70 °C 2.0b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb Steady State RthJA 32 40 °C/W Maximum Junction-to-Case Steady State RthJC 0.33 0.4 RoHS COMPLIANT 0 0 0 TO-252 S GD www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AOD4184A 1 |
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