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AOD4286 Datenblatt(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Teilenummer AOD4286
Bauteilbeschribung  N-Channel 100 V (D-S) MOSFET
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Hersteller  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

AOD4286 Datenblatt(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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N-Channel 100 V (D-S) MOSFET
FEATURES
•
TrenchFET® Power MOSFET
•
175 °C Junction Temperature
•
PWM Optimized
•
100 % Rg Tested
•
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
Primary Side Switch
PRODUCT SUMMARY
VDS (V)
RDS(on) ()ID (A)
100
0.
at VGS = 10 V
N-Channel MOSFET
G
D
S
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
b
TC = 25 °C
ID
A
TC = 125 °C
13
Pulsed Drain Current
IDM
40
Continuous Source Current (Diode Conduction)
IS
3
Avalanche Current
IAS
3
Single Pulse Avalanche Energy
L = 0.1 mH
EAS
18
mJ
Maximum Power Dissipation
TC = 25 °C
PD
96b
W
TA = 25 °C
3a
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambienta
t
 10 s
RthJA
15
18
°C/W
Steady State
40
50
Junction-to-Case (Drain)
RthJC
0.85
1.1
1
5
1
1
5
TO-252
S
GD
14
www.VBsemi.tw
E-mail：China@VBsemi TEL:86-755-83251052
AOD4286
1


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