Datenblatt-Suchmaschine für elektronische Bauteile |
|
TIP111 Datenblatt(PDF) 2 Page - ON Semiconductor |
|
TIP111 Datenblatt(HTML) 2 Page - ON Semiconductor |
2 / 6 page TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 2 Motorola Bipolar Power Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 VCEO(sus) 60 80 100 — — — Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP110, TIP115 (VCE = 40 Vdc, IB = 0) TIP111, TIP116 (VCE = 50 Vdc, IB = 0) TIP112 ,TIP117 ICEO — — — 2.0 2.0 2.0 mAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) TIP110, TIP115 (VCB = 80 Vdc, IE = 0) TIP111, TIP116 (VCB = 100 Vdc, IE = 0) TIP112, TIP117 ICBO — — — 1.0 1.0 1.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 2.0 mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 2.0 Adc, VCE = 4.0 Vdc) hFE 1000 500 — — — Collector–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) VCE(sat) — 2.5 Vdc Base–Emitter On Voltage (IC = 2.0 Adc, VCE = 4.0 Vdc) VBE(on) — 2.8 Vdc DYNAMIC CHARACTERISTICS Small–Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) hfe 25 — — Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117 TIP110, TIP111, TIP112 Cob — — 200 100 pF (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%. Figure 2. Switching Times Test Circuit 4.0 0.04 Figure 3. Switching Times IC, COLLECTOR CURRENT (AMP) 2.0 1.0 0.8 0.2 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.6 PNP NPN tf tr ts td @ VBE(off) = 0 V2 approx + 8.0 V V1 approx –12 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 25 µs 0 RB 51 D1 + 4.0 V VCC – 30 V RC TUT ≈ 8.0 k ≈ 60 SCOPE for td and tr, D1 is disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. For NPN test circuit, reverse diode, polarities and input pulses. RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC = 30 V IC/IB = 250 0.4 IB1 = IB2 TJ = 25°C |
Ähnliche Teilenummer - TIP111 |
|
Ähnliche Beschreibung - TIP111 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |