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GS8161E32D-200I Datenblatt(PDF) 10 Page - GSI Technology

Teilenummer GS8161E32D-200I
Bauteilbeschribung  1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
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Hersteller  GSI [GSI Technology]
Direct Link  http://www.gsitechnology.com
Logo GSI - GSI Technology

GS8161E32D-200I Datenblatt(HTML) 10 Page - GSI Technology

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GS8161E18(T/D)/GS816132(D)/GS816136(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.13 11/2004
10/36
© 1999, GSI Technology
Note:
There is a are pull-up devices on the ZQ, SCD, and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and
the chip will operate in the default states as specified in the above tables.
Burst Counter Sequences
BPR 1999.05.18
Mode Pin Functions
Mode Name
Pin Name
State
Function
Burst Order Control
LBO
L
Linear Burst
H
Interleaved Burst
Output Register Control
FT
L
Flow Through
H or NC
Pipeline
Power Down Control
ZZ
L or NC
Active
H
Standby, IDD = ISB
Single/Dual Cycle Deselect Control
SCD
L
Dual Cycle Deselect
H or NC
Single Cycle Deselect
FLXDrive Output Impedance Control
ZQ
L
High Drive (Low Impedance)
H or NC
Low Drive (High Impedance)
9th Bit Enable
PE
L
Activate DQPx I/Os (x18/x36 mode)
H or NC
Deactivate DQPx I/Os (x16/x32 mode)
Note:
The burst counter wraps to initial state on the 5th clock.
Note:
The burst counter wraps to initial state on the 5th clock.
Linear Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
Interleaved Burst Sequence
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00


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