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2SA1323 Datenblatt(PDF) 1 Page - Panasonic Semiconductor

Teilenummer 2SA1323
Bauteilbeschribung  Silicon PNP epitaxial planer type
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Hersteller  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

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1
Transistor
2SA1323
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC3314
s Features
q
Allowing supply with the radial taping.
q
High transition frequency fT.
q
Optimum for high-density mounting.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
EIAJ:SC–72
3:Base
New S Type Package
4.0
±0.2
marking
2.54
±0.15
1.27
1.27
123
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–20
–5
–60
–30
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitanse
Symbol
ICBO
ICEO
IEBO
hFE
*
VCE(sat)
VBE
fT
NF
Zrb
Cre
Conditions
VCB = –10V, IE = 0
VCE = –20V, IB = 0
VEB = –5V, IC = 0
VCE = –10V, IC = –1mA
IC = –10mA, IB = –1mA
VCE = –10V, IC = –1mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 1mA, f = 5MHz
VCB = –10V, IE = 1mA, f = 2MHz
VCE = –10V, IC = –1mA, f = 10.7MHz
min
70
150
typ
– 0.1
– 0.7
300
2.8
22
1.2
max
– 0.1
–100
–10
220
4.0
50
2.0
Unit
µA
µA
µA
V
V
MHz
dB
pF
*h
FE Rank classification
Rank
B
C
hFE
70 ~ 140
110 ~ 220


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