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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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SI7942DP Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI7942DP Datenblatt(HTML) 1 Page - Vishay Siliconix |
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1 / 6 page  FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package D Dual MOSFET for Space Savings APPLICATIONS D Synchronous Buck Shoot-Through Resistant D Optimized for Primary Side Switch Si7942DP Vishay Siliconix Document Number: 72118 S-03373—Rev. A, 03-Mar-03 www.vishay.com 1 Dual N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.049 @ VGS = 10 V 5.9 100 0.060 @ VGS = 6 V 5.5 N-Channel MOSFET D1 G1 S1 N-Channel MOSFET D2 G2 S2 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D1 D1 D2 D2 6.15 mm 5.15 mm Bottom View PowerPAK SO-8 Ordering Information: Si7942DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 5.9 3.8 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 4.7 3.0 Pulsed Drain Current IDM 20 A Continuous Source Current (Diode Conduction)a IS 2.9 1.2 Single Avalanche Current L = 0.1 mH IAS 20 Single Avalanche Energy EAS 20 mJ Maximum Power Dissipationa TA = 25_C PD 3.5 1.4 W Maximum Power Dissipationa TA = 70_C PD 2.2 0.9 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 10 sec R 26 35 Maximum Junction-to-Ambienta Steady State RthJA 60 85 _C/W Maximum Junction-to-Case (Drain) Steady State RthJC 2.2 2.7 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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Ähnliche Beschreibung - SI7942DP |
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