Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1894 Datenblatt(PDF) 1 Page - Panasonic Semiconductor |
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2SD1894 Datenblatt(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Power Transistors 2SB1254 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1894 s Features q Optimum for 60W HiFi output q High foward current transfer ratio hFE q Low collector to emitter saturation voltage VCE(sat): < –2.5V q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –160 –140 –5 –12 –7 70 3 150 –55 to +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 * VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = –160V, IE = 0 VCE = –140V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –5V, IC = –1A VCE = –5V, IC = –6A IC = –6A, IB = –6mA IC = –6A, IB = –6mA VCE = –10V, IC = – 0.5A, f = 1MHz IC = –6A, IB1 = –6mA, IB2 = 6mA, VCC = –50V min 140 2000 5000 typ 20 1.0 1.5 1.2 max –100 –100 –100 30000 –2.5 –3.0 Unit µA µA µA V V V MHz µs µs µs TC=25°C Ta=25 °C Unit: mm Internal Connection 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) B C E *h FE2 Rank classification Rank Q P hFE2 5000 to 15000 8000 to 30000 15.0 ±0.3 5.0 ±0.2 11.0 ±0.2 10.9 ±0.5 5.45 ±0.3 3 2 1 1.1 ±0.1 2.0 ±0.2 0.6 ±0.2 2.0 ±0.1 φ3.2±0.1 3.2 |
Ähnliche Teilenummer - 2SD1894 |
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Ähnliche Beschreibung - 2SD1894 |
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