RSS085N05-TB datasheet(1/9 Pages) VBSEMI

Teilenummer	RSS085N05-TB

Bauteilbeschribung	N-Channel 40-V (D-S) MOSFET

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N-Channel 40-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

•

Compliant to RoHS directive 2002/95/EC

APPLICATIONS

•

Synchronous Rectification

•

POL, IBC

- Secondary Side

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

d

Qg (Typ.)

40

0.012 at VGS = 10 V

12

15 nC

0.012 at VGS = 4.5 V

9

D

S

D

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

S

N-Channel MOSFET

G

D

S

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 85 °C/W.

d. Based on TC = 25 °C.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

12

A

TC = 70 °C

8

TA = 25 °C

12.4a, b

TA = 70 °C

8.8a, b

Pulsed Drain Current

IDM

50

Avalanche Current

L = 0.1 mH

IAS

15

Avalanche Energy

EAS

11

mJ

Continuous Source-Drain Diode Current

TC = 25 °C

IS

5

A

TA = 25 °C

2.1a, b

Maximum Power Dissipation

TC = 25 °C

PD

6

W

TC = 70 °C

3.8

TA = 25 °C

2.5a, b

TA = 70 °C

1.6a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c

t

≤ 10 s

RthJA

37

50

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

17

21

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RSS085N05-TB

1

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