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RU6H5L Datenblatt(PDF) 5 Page - VBsemi Electronics Co.,Ltd

Teile-Nr. RU6H5L
Beschreibung  Power MOSFET
Download  9 Pages
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Hersteller  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

RU6H5L Datenblatt(HTML) 5 Page - VBsemi Electronics Co.,Ltd

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Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature
( C)
°
C
VDS
Pulse width
≤ 1 µs
Duty factor
≤ 0.1 %
RD
VGS
R G
D.U.T.
10 V
+
- VDD
VDS
90 %
10 %
VGS
td(on)
tr
td(off) tf
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (s)
1
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
A
R
G
IAS
0.01
Ω
tp
D.U.T.
L
VDS
+
- VDD
Driver
A
15 V
20 V
tp
V DS
IAS
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
RU6H5L
5


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