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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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RU30L30M3 Datenblatt(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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RU30L30M3 Datenblatt(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
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P-Channel 30 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • Adaptor Switch • Notebook PC PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) e,f Qg (Typ.) - 30 0.0075 at VGS = - 10 V -35 24.6 nC 0.0105 at VGS = - 4.5V - 30 Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c.Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. d.Package limited. e.Based on T C = 25 °C ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 35 A TC = 70 °C - 30 TA = 25 °C - 14.4a, b TA = 70 °C - 11.5a, b Pulsed Drain Current IDM - 60 Continuous Source-Drain Diode Current TC = 25 °C IS - 35e TA = 25 °C - 3.2a, b Avalanche Current L = 0.1 mH IAS - 25 Single-Pulse Avalanche Energy EAS 31.25 mJ Maximum Power Dissipation TC = 25 °C PD 52.1 W TC = 70 °C 3.3 TA = 25 °C 3.8a, b TA = 70 °C 2.4a, b Operating Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260 S G D P-Channel MOSFET Top View 1 2 3 4 8 7 6 5 DFN 3x3 EP Top View Bottom View Pin 1 Typ. , E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RU30L30M3 1 |
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