Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3507 Datenblatt(PDF) 2 Page - Panasonic Semiconductor |
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2SC3507 Datenblatt(HTML) 2 Page - Panasonic Semiconductor |
2 / 3 page 2 Power Transistors 2SC3507 PC —Ta IC —VCE VCE(sat) —IC VBE(sat) —IC hFE —IC fT —IC ton, tstg, tf — IC Area of safe operation (ASO) 0 150 125 100 25 75 50 0 100 80 60 40 20 (1) (2) (3) (1) T C=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (P C=3W) Ambient temperature Ta (˚C) 012 10 8 26 4 0 10 8 6 4 2 T C=25˚C 200mA 100mA 20mA 300mA 400mA 500mA I B=800mA Collector to emitter voltage V CE (V) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 I C/IB=5 –25˚C 25˚C T C=100˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 I C/IB=5 T C=–25˚C 25˚C 100˚C Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 T C=100˚C 25˚C –25˚C V CE=5V Collector current I C (A) 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 V CE=5V f=1MHz T C=25˚C Collector current I C (A) 08 26 47 15 3 0.01 10 1 0.1 0.03 0.3 3 t stg t f t on Pulsed t w=1ms Duty cycle=1% I C/IB=5 (2I B1=–IB2) V CC=250V T C=25˚C Collector current I C (A) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 Non repetitive pulse T C=25˚C I CP I C t=1ms 10ms DC Collector to emitter voltage V CE (V) |
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