Datenblatt-Suchmaschine für elektronische Bauteile |
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NVHL040N65S3 Datenblatt(PDF) 2 Page - ON Semiconductor |
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NVHL040N65S3 Datenblatt(HTML) 2 Page - ON Semiconductor |
2 / 10 page NVHL040N65S3 www.onsemi.com 2 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS Drain to Source Voltage 650 V VGSS Gate to Source Voltage − DC ±30 V − AC (f > 1 Hz) ±30 ID Drain Current − Continuous (TC = 25°C) 65 A − Continuous (TC = 100°C) 41 IDM Drain Current − Pulsed (Note 1) 162.5 A EAS Single Pulsed Avalanche Energy (Note 2) 358 mJ IAS Avalanche Current (Note 2) 8.1 A EAR Repetitive Avalanche Energy (Note 1) 4.17 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) 417 W − Derate Above 25°C 3.33 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 8.1 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 32.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 0.3 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NVHL040N65S3 NVHL040N65S3 TO−247 G03 Tube N/A N/A 30 Units ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage VGS =0V, ID = 1 mA, TJ =25_C 650 − − V VGS =0V, ID = 1 mA, TJ = 150_C 700 − − V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C − 0.64 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS =0V − − 1 mA VDS = 520 V, TC = 125_C − 4.5 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS =0V − − ±100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS =VDS, ID = 1.7 mA 2.5 − 4.5 V RDS(on) Static Drain to Source On Resistance VGS =10V, ID = 32.5 A − 35.4 40 mW gFS Forward Transconductance VDS =20V, ID = 32.5 A − 46 − S |
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