NVHL060N090SC1 datasheet(2/7 Pages) ONSEMI

Teilenummer	NVHL060N090SC1

Bauteilbeschribung	MOSFET - SiC Power, Single N-Channel

Download	7 Pages

Scroll/Zoom	100%

Hersteller	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 7 page

NVHL060N090SC1

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS =0V, ID = 1 mA

900

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

ID = 1 mA, referenced to 25_C

574

mV/_C

Zero Gate Voltage Drain Current

IDSS

VGS =0V, VDS = 900 V, TJ =25_C

100

mA

VGS =0V, VDS = 900 V, TJ = 175_C

250

Gate−to−Source Leakage Current

IGSS

VGS = +19/−10 V, VDS =0V

±1

mA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(th)

VGS =VDS, ID = 5 mA

1.8

2.7

4.3

V

Recommended Gate Voltage

VGOP

−5

+15

V

Drain−to−Source On Resistance

RDS(on)

VGS =15V, ID = 20 A, TJ =25_C

60

84

mW

VGS =15V, ID = 20 A, TJ = 175_C

76

135

Forward Transconductance

gFS

VDS =20V, ID =20A

17

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = 450 V

1770

pF

Output Capacitance

COSS

113

Reverse Transfer Capacitance

CRSS

11

Total Gate Charge

QG(tot)

VGS = −5/15 V, VDS = 720 V, ID =10A

87

nC

Threshold Gate Charge

QG(th)

17

Gate−to−Source Charge

QGS

27

Gate−to−Drain Charge

QGD

26

Gate Resistance

RG

f = 1 MHz

3.0

W

SWITCHING CHARACTERISTICS

Turn-On Delay Time

td(on)

VGS = −5/15 V, VDS = 720 V,

ID = 20 A, RG = 2.5 W,

Inductive Load

22

40

ns

Rise Time

tr

33

66

Turn−Off Delay Time

td(off)

31

74

Fall Time

tf

11

20

Turn-On Switching Loss

EON

464

mJ

Turn-Off Switching Loss

EOFF

23

Total Switching Loss

ETOT

487

DRAIN−SOURCE DIODE CHARACTERISTICS

Continuous Drain−to−Source Diode

Forward Current

ISD

VGS = −5V, TJ =25_C

22

A

Pulsed Drain−to−Source Diode For-

ward Current (Note 2)

ISDM

VGS = −5V, TJ =25_C

184

A

Forward Diode Voltage

VSD

VGS = −5V, ISD = 10 A, TJ =25_C

3.9

V

Reverse Recovery Time

tRR

VGS = −5/15 V, ISD =30A,

dIS/dt = 1000 A/ms, VDS = 720 V

18

ns

Reverse Recovery Charge

QRR

84

nC

Reverse Recovery Energy

EREC

1.0

mJ

Peak Reverse Recovery Current

IRRM

9.0

A

Charge Time

ta

10

ns

Discharge Time

tb

8.0

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Ähnliche Beschreibung - NVHL060N090SC1

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
ON Semiconductor	NVHL080N120SC1A	297Kb / 7P	MOSFET - SiC Power, Single N-Channel April, 2020 ??Rev. 1
	NTHL020N120SC1	313Kb / 7P	MOSFET - SiC Power, Single N-Channel October, 2019 ??Rev. 0
	NVHL020N120SC1	239Kb / 7P	MOSFET - SiC Power, Single N-Channel October, 2019 ??Rev. 0
	NVHL080N120SC1	377Kb / 7P	MOSFET - SiC Power, Single N-Channel April, 2020 ??Rev. 3
	NVBG160N120SC1	244Kb / 8P	MOSFET ??SiC Power, Single N-Channel, D2PAK-7L February, 2020 ??Rev. 0
	NVBG080N120SC1	242Kb / 8P	MOSFET ??SiC Power, Single N-Channel, D2PAK-7L April, 2020 ??Rev. 1
Rohm	SCTMU001F	379Kb / 10P	N-channel SiC power MOSFET
	SCT2280KE	787Kb / 14P	N-channel SiC power MOSFET
	SCT3030KL	734Kb / 14P	N-channel SiC power MOSFET
	SCT3080AL	736Kb / 14P	N-channel SiC power MOSFET

More results

NVHL060N090SC1 Datenblatt(PDF) 2 Page - ON Semiconductor

NVHL060N090SC1 Datenblatt(HTML) 2 Page - ON Semiconductor

Ähnliche Teilenummer - NVHL060N090SC1

Ähnliche Beschreibung - NVHL060N090SC1

Html Pages

1 2 3 4 5 6 7

Datenblatt Download

Link URL