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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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SM1F14NSU Datenblatt(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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SM1F14NSU Datenblatt(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
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4 / 9 page  TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 0.01 0.001 VSD - Source-to-Drain Voltage (V) 1.2 1 0.8 0.6 0.4 0.2 0 100 10 1 TJ = 25 °C TJ = 150 °C - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 - 50 - 25 0 25 50 75 100 125 150 ID = 5 mA TJ - Temperature ( C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.04 0.08 0.12 0.16 0.20 0246 8 10 VGS - Gate-to-Source Voltage (V) ID = 5 A = 125 °C J T TJ = 25 °C 0 120 200 40 80 Time (s) 160 110 0.1 0.01 0.001 Safe Operating Area, Junction-to-Ambient * VGS minimum VGS at which RDS(on) is specified 100 0.01 10 0.1 VDS - Drain-to-Source Voltage (V) 1 0.01 0.1 1 10 100 1000 TA = 25 °C Single Pulse 1 s 10 s DC 10 ms 100 ms 1 ms Limited by RDS(on)* E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM1F14NSU 4 |
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