Datenblatt-Suchmaschine für elektronische Bauteile |
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SM1105NSV Datenblatt(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
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SM1105NSV Datenblatt(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
3 / 6 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 8 16 24 32 40 VGS = 4.5 V ID - Drain Current (A) VGS = 10 V 0 2 4 6 8 10 04 8 12 16 20 ID = 6.0 V VDS = 30 V Qg - Total Gate Charge (nC) 2.0 2.5 1 10 50 0.00 0.5 1.0 1.5 TJ = 25 °C TJ = 175 °C VSD - Source-to-Drain Voltage (V) Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 300 600 900 1200 1500 1800 2100 0 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 175 VGS = 10 V ID = 6.0 A TJ - Junction Temperature (°C) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 02 4 6 8 10 ID = 6.0 A VGS - Gate-to-Source Voltage (V) 15 30 45 60 75 90 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SM1105NSV 3 |
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