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TC55VZM216AFTN-10 Datenblatt(PDF) 3 Page - Toshiba Semiconductor

Teilenummer TC55VZM216AFTN-10
Bauteilbeschribung  262,144-WORD BY 16-BIT CMOS STATIC RAM
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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TC55VZM216AJJN/AFTN08,10,12
2003-01-17
3/11
DC RECOMMENDED OPERATING CONDITIONS (Ta
==== 0° to 70°C)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
VDD
Power Supply Voltage
3.0
3.3
3.6
V
VIH
Input High Voltage
2.0
VDD + 0.3**
V
VIL
Input Low Voltage
−0.3*
0.8
V
*:
−1.0 V with a pulse width of 20% of tRC min (4 ns max)
**: VDD + 1.0 V with a pulse width of 20% of tRC min (4 ns max)
DC CHARACTERISTICS (Ta
==== 0° to 70°C, VDD ==== 3.3 V ±±±± 0.3 V)
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
IIL
Input Leakage Current
(Except NU pin)
VIN = 0 to VDD
−1
1
µA
ILO
Output Leakage
Current
CE
= VIH or WE = VIL or OE = VIH,
VOUT = 0 to VDD
−1
1
µA
II (NU)
Input Leakage Current
(NU pin)
VIN = 0 V
−1
1
µA
IOH = −2 mA
2.4
VOH
Output High Voltage
IOH = −100 µA
VDD − 0.2
IOL = 2 mA
0.4
VOL
Output Low Voltage
IOL = 100 µA
0.2
V
tcycle = 8 ns
170
tcycle = 10 ns
160
IDDO1
CE
= VIL, IOUT = 0 mA,
OE
= VIH,
Other Input
= VIH/VIL
tcycle = 12 ns
150
tcycle = 8 ns
140
tcycle = 10 ns
130
IDDO2
Operating Current
CE
= 0.2 V, IOUT = 0 mA,
OE
= VDD − 0.2 V,
Other Input
= VDD − 0.2 V/0.2 V
tcycle = 12 ns
120
mA
IDDS1
CE
= VIH, Other Input = VIH or VIL
55
IDDS2
Standby Current
CE
= VDD − 0.2 V, Other Input = VDD − 0.2 V or 0.2 V
4
mA
CAPACITANCE (Ta
==== 25°C, f ==== 1 .0 MHz)
SYMBOL
PARAMETER
TEST CONDITION
MAX
UNIT
CIN
Input Capacitance
VIN = GND
6
pF
CI/O
Input/Output Capacitance
VI/O = GND
8
pF
Note:
This parameter is periodically sampled and is not 100% tested.


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