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SPN5454 Datenblatt(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Teile-Nr. SPN5454
Beschreibung  N-Channel MOSFET uses advanced trench technology
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Hersteller  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Homepage  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPN5454 Datenblatt(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Description:
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features:
1) VDS=40V,ID=30A,RDS(ON)<16mΩ@VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings:(T
C=25unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current-TC=25℃
1
30
A
Continuous Drain Current-TC=100℃
1
21.2
Pulsed Drain Current
2
70
PD
Power Dissipation,
TC=25℃
4
45
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +175
RƟJC
Thermal Resistance,Junction to Case
2
3.3
℃/W
D
S
G
SPN5454


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