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SPN6098 Datenblatt(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Teile-Nr. SPN6098
Beschreibung  N-Channel MOSFET uses advanced trench technology
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Hersteller  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Homepage  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPN6098 Datenblatt(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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3
trr
Reverse Recovery Time
36.3
---
Ns
qrr
Reverse Recovery Charge
1.4
---
nc
Notes:
Typical Characteristics: (T
C=25unless otherwise noted)
IS=25 A,
di/dt=100 A/μs
1)
Calculated continuous current based on maximum allowable junction temperature.
2)
Repetitive rating; pulse width limited by max. junction temperature.
3)
Pd is based on max. junction temperature, using junction-case thermal resistance.
4)
VDD=30 V, RG=50 Ω, L=0.3 mH, starting Tj=25 ℃.
5)
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with Ta=25 ℃.
Figure 1, Typ. output characteristics
Figure 2, Typ. transfer characteristics
0
2
4
6
8
10
0
50
100
150
200
Tj = 25 ℃
VGS= 10 V
VGS= 7.5 V
VGS= 6.5 V
VGS= 6 V
VGS= 5.5 V
VGS= 5 V
VGS= 4.5 V
VGS= 4 V
VGS= 3.5 V
VDS, Drain-source voltage (V)
3.5
4
4.5
5
5.5
6
6.5
7.5
10
2
4
6
8
10
0.1
1
10
100
1000
V
GS, Gate-source voltage(V)
V
DS= 10 V
T
j = 25 ℃
10
20
30
40
50
60
100
101
102
103
104
f
= 100 kHz
V
GS = 0 V
V
DS, Drain-source voltage (V)
C
iss
C
oss
C
rss
0
5
10
15
20
0
2
4
6
8
10
I
D = 25 A
V
DS = 50 V
Q
g, Gate charge(nC)
Figure 3, Typ. capacitances
Figure 4, Typ. gate charge
SPN6098


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