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SPN6098 Datenblatt(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Teile-Nr. SPN6098
Beschreibung  N-Channel MOSFET uses advanced trench technology
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Hersteller  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Homepage  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPN6098 Datenblatt(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics:(T
C=25unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
60
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=60V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
---
2.5
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=20A
---
7.5
10
VGS=4.5V,ID=10A
---
10
13
Dynamic Characteristics
Ciss
Input Capacitance
VDS=50V, VGS=0V, f=1MHz
---
1204
---
pF
Coss
Output Capacitance
---
194.1
---
Crss
Reverse Transfer Capacitance
---
9.9
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=50V, ID=25A,
VGS=10V,RGEN=3Ω
---
23.9
---
ns
tr
Rise Time
---
4.6
---
ns
td(off)
Turn-Off Delay Time
---
37.8
---
ns
tf
Fall Time
---
6.4
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=50V,
ID=25A
---
17.9
---
nC
Qgs
Gate-Source
Charge
---
3.8
---
nC
Qgd
Gate-Drain “Miller” Charge
---
4.2
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,IS=20A
---
---
1.3
V
Ls
Continuous Source Current
---
68
A
VGS<Vth
SPN6098


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