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SPN9910 Datenblatt(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Teile-Nr. SPN9910
Beschreibung  N-Channel MOSFET uses advanced trench technology
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Hersteller  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Homepage  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPN9910 Datenblatt(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  SPN9910 Datenblatt HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SPN9910 Datenblatt HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SPN9910 Datenblatt HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SPN9910 Datenblatt HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SPN9910 Datenblatt HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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?
3 ?
Ls
Continuous Source Current
---
45
---
A
lsm
Pulsed Source Current
180
---
A
trr
Reverse Recovery Time
3
24
---
Ns
qrr
Reverse Recovery Charge
3
30
---
nc
Notes:
Typical Characteristics? (T
C=25? unless otherwise noted)
TJ=25?,IF=15A
di/dt=100A/?s
1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25?,VDD=30V,V
G=10V, RG=25?
3 Pulse Test: Pulse Width ? 300?s, Duty Cycle ? 1.5%, Starting TJ=25?
Figure1. Output Characteristics
Figure2. Transfer Characteristics
VDS Drain-Source Voltage (V)
VGS Gate-Source Voltage (V)
Figure3. BVDSS vs Junction Temperature
Figure4. ID vs Junction Temperature
TJ-Junction Temperature(?)
TJ-Junction Temperature(?)
SPN9910


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