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SPN9910 Datenblatt(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Teile-Nr. SPN9910
Beschreibung  N-Channel MOSFET uses advanced trench technology
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Hersteller  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Homepage  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SPN9910 Datenblatt(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics:(T
C=25unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
60
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=60V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±25V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
---
3
V
RDS(ON)
Drain-Source On Resistance
2
VGS=10V,ID=40A
---
10.5
12
VGS=4.5V,ID=0A
---
---
---
GFS
Forward Transconductance
VDS=10V, ID=40A
18
---
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
1659
---
pF
Coss
Output Capacitance
---
180
---
Crss
Reverse Transfer Capacitance
---
128
---
Switching Characteristics
td(on)
Turn-On Delay Time
3
VDD=30V, ID=0A,
VGS=10V,RGEN=3Ω
---
15
---
ns
tr
Rise Time
2,3
---
25
---
ns
td(off)
Turn-Off Delay Time
---
53
---
ns
tf
Fall Time
2,3
---
23
---
ns
Qg
Total Gate Charge
3
VGS=10V, VDS=30V,
ID=15A
---
50
---
nC
Qgs
Gate-Source
Charge
---
12
---
nC
Qgd
Gate-Drain “Miller” Charge
---
23
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=1A
---
0.89
0.99
V
SPN9910


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