S-MMBT5550 datasheet(1/5 Pages) LEIDITECH

Teilenummer	S-MMBT5550

Bauteilbeschribung	High Voltage Transistors

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Hersteller	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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S-MMBT5551

S- MMBT5550

M1F

3000/Tape&Reel

S-MMBT5550

S-MMBT5551

High Voltage Transistors

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

140

Vdc

Collector–Base Voltage

V CBO

160

Vdc

Emitter–Base Voltage

V EBO

6.0

Vdc

Collector Current — Continuous

I C

600

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

PD

225

mW

TA = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C/W

Total Device Dissipation

PD

300

mW

Alumina Substrate, (2) TA = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

TJ ,Tstg

–55 to +150

°C

2

EMITTER

3

COLLECTOR

1

BASE

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

S- MMBT5550

M1F

10000/Tape&Reel

S-MMBT5551

G1

3000/Tape&Reel

G1

10000/Tape&Reel

Dimensions SOT-23

Pin Configuration

Rev :

www.leiditech.com

01.06.2015

5/5

FEATURE

We declare that the material of product

compliance with RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC-Q101 Qualified and

PPAP Capable.

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