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TT8K2 Datenblatt(PDF) 4 Page - VBsemi Electronics Co.,Ltd

Teile-Nr. TT8K2
Beschreibung  Dual N-Channel 20 V (D-S) MOSFET
Download  8 Pages
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Hersteller  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

TT8K2 Datenblatt(HTML) 4 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TJ = 25 °C
TJ = 150 °C
VSD - Source-to-Drain Voltage (V)
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
- 50
- 25
0
25
50
75
100
125
150
ID = 250 μA
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
02
4
6
8
10
TJ =25 °C
ID =3.4 A
TJ = 125 °C
VGS - Gate-to-Source Voltage (V)
0
1
2
3
4
5
6
0.01
0.1
1
10
100
1000
Time (s)
Safe Operating Area, Junction-to-Ambient
100
1
0.1
1
10
100
0.01
10
0.1
TA = 25 °C
Single Pulse
Limited by RDS(on)*
BVDSS Limited
1ms
100 μs
10 ms
VDS - Drain-to-Source Voltage (V)
*V GS > minimum VGS at which RDS(on) is specified
DC
1s,10s
100 ms
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
TT8K2
4


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