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TT8K2 Datenblatt(PDF) 1 Page - VBsemi Electronics Co.,Ltd

Teile-Nr. TT8K2
Beschreibung  Dual N-Channel 20 V (D-S) MOSFET
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Hersteller  VBSEMI [VBsemi Electronics Co.,Ltd]
Homepage  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

TT8K2 Datenblatt(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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Dual N-Channel
20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a
Qg (Typ.)
20
0.0
22 at V
GS = 4.5 V
4.8
1.8 nC
0.0
28 at V
GS = 2.5 V
3.3
N-Channel MOSFET
G 1
D1
S1
N-Channel MOSFET
G2
D2
S2
Notes:
a. TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 150 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±
12
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
4.8
A
TC = 70 °C
3
TA = 25 °C
3.4b, c
TA = 70 °C
2.7b, c
Pulsed Drain Current
IDM
15
Continuous Source-Drain Diode Current
TC = 25 °C
IS
1.17
TA = 25 °C
0.95b, c
Maximum Power Dissipation
TC = 25 °C
PD
1.4
W
TC = 70 °C
0.9
TA = 25 °C
1.14b, c
TA = 70 °C
0.73b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
t
≤ 5 s
RthJA
93
110
°C/W
Maximum Junction-to-Foot
Steady State
RthJF
75
90
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Load Switch for Portable Applications
DC/DC Converters
D
1
2
3
4
8
7
6
5
1206-8 ChipFET
® (Dual)
Bottom View
S1
G1
S2
G2
D1
D1
D2
D2
1
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
TT8K2
1


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