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KM6161002B-10 Datenblatt(PDF) 4 Page - Samsung semiconductor

Teilenummer KM6161002B-10
Bauteilbeschribung  64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out.
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Hersteller  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM6161002B-10 Datenblatt(HTML) 4 Page - Samsung semiconductor

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KM6161002B, KM6161002BI
CMOS SRAM
Rev 2.0
- 4 -
February 1998
TEST CONDITIONS
NOTE: The above test conditions are also applied at industrial temperature range.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS (TA=0 to 70
°C, VCC=5.0V±10%, unless otherwise noted.)
READ CYCLE
NOTE: The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
KM6161002B-8
KM6161002B-10
KM6161002B-12
Unit
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
8
-
10
-
12
-
ns
Address Access Time
tAA
-
8
-
10
-
12
ns
Chip Select to Output
tCO
-
8
-
10
-
12
ns
Output Enable to Valid Output
tOE
-
4
-
5
-
6
ns
UB, LB Access Time
tBA
-
4
-
5
-
6
ns
Chip Enable to Low-Z Output
tLZ
3
-
3
-
3
-
ns
Output Enable to Low-Z Output
tOLZ
0
-
0
-
0
-
ns
UB, LB Enable to Low-Z Output
tBLZ
0
-
0
-
0
-
ns
Chip Disable to High-Z Output
tHZ
0
4
0
5
0
6
ns
Output Disable to High-Z Output
tOHZ
0
4
0
5
0
6
ns
UB, LB Disable to High-Z Output
tBHZ
0
4
0
5
0
6
ns
Output Hold from Address Change
tOH
3
-
3
-
3
-
ns
Output Loads(B)
DOUT
5pF*
480
255
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
+5.0V
* Including Scope and Jig Capacitance
Output Loads(A)
DOUT
RL = 50
ZO = 50
VL = 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.


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