Datenblatt-Suchmaschine für elektronische Bauteile |
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KM6161002B-10 Datenblatt(PDF) 4 Page - Samsung semiconductor |
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KM6161002B-10 Datenblatt(HTML) 4 Page - Samsung semiconductor |
4 / 9 page KM6161002B, KM6161002BI CMOS SRAM Rev 2.0 - 4 - February 1998 TEST CONDITIONS NOTE: The above test conditions are also applied at industrial temperature range. Parameter Value Input Pulse Levels 0V to 3V Input Rise and Fall Times 3ns Input and Output timing Reference Levels 1.5V Output Loads See below AC CHARACTERISTICS (TA=0 to 70 °C, VCC=5.0V±10%, unless otherwise noted.) READ CYCLE NOTE: The above parameters are also guaranteed at industrial temperature range. Parameter Symbol KM6161002B-8 KM6161002B-10 KM6161002B-12 Unit Min Max Min Max Min Max Read Cycle Time tRC 8 - 10 - 12 - ns Address Access Time tAA - 8 - 10 - 12 ns Chip Select to Output tCO - 8 - 10 - 12 ns Output Enable to Valid Output tOE - 4 - 5 - 6 ns UB, LB Access Time tBA - 4 - 5 - 6 ns Chip Enable to Low-Z Output tLZ 3 - 3 - 3 - ns Output Enable to Low-Z Output tOLZ 0 - 0 - 0 - ns UB, LB Enable to Low-Z Output tBLZ 0 - 0 - 0 - ns Chip Disable to High-Z Output tHZ 0 4 0 5 0 6 ns Output Disable to High-Z Output tOHZ 0 4 0 5 0 6 ns UB, LB Disable to High-Z Output tBHZ 0 4 0 5 0 6 ns Output Hold from Address Change tOH 3 - 3 - 3 - ns Output Loads(B) DOUT 5pF* 480 Ω 255 Ω for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ +5.0V * Including Scope and Jig Capacitance Output Loads(A) DOUT RL = 50 Ω ZO = 50 Ω VL = 1.5V 30pF* * Capacitive Load consists of all components of the test environment. |
Ähnliche Teilenummer - KM6161002B-10 |
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Ähnliche Beschreibung - KM6161002B-10 |
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