GT30J110SRA datasheet(3/10 Pages) TOSHIBA

Teilenummer	GT30J110SRA

Bauteilbeschribung	Discrete IGBTs Silicon N-Channel IGBT

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Hersteller	TOSHIBA [Toshiba Semiconductor]

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GT30J110SRA

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6. Electrical Characteristics

6.1. Static Characteristics (Ta = 25 �, unless otherwise specified)

Characteristics

Gate leakage current

Collector cut-off current

Gate-emitter cut-off voltage

Collector-emitter saturation voltage

Diode forward voltage

Symbol

IGES

ICES

VGE(OFF)

VCE(sat)(1)

VCE(sat)(2)

VCE(sat)(3)

VCE(sat)(4)

VF(1)

VF(2)

Test Condition

VGE = ±25 V, VCE = 0 V

VCE = 1100 V, VGE = 0 V

IC = 60 mA, VCE = 5 V

IC = 30 A, VGE = 15 V

(pulse test)

IC = 30 A, VGE = 15 V,

Tc = 125 � (pulse test)

IC = 60 A, VGE = 15 V

(pulse test)

IC = 60 A, VGE = 15 V,

Tc = 125 � (pulse test)

IF = 30 A, VGE = 0 V

(pulse test)

IF = 30 A, VGE = 0 V,

Tc = 125 � (pulse test)

Min

�

5.0

�

Typ.

�

1.60

1.80

2.15

2.50

1.40

1.35

Max

±100

100

7.0

1.80

�

1.80

�

Unit

nA

µA

V

2021-02-24

Rev.3.0

Toshiba Electronic Devices & Storage Corporation

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