TRS6A65F datasheet(2/6 Pages) TOSHIBA

Teilenummer	TRS6A65F

Bauteilbeschribung	SiC Schottky Barrier Diode

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TRS6A65F

2

4.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Repetitive peak reverse voltage

Forward DC current

Forward pulse current

Non-repetitive peak forward surge current

I2t limit value

Junction temperature

Storage temperature

Mounting torque

Isolation voltage(t=1.0s)

Symbol

VRRM

IF(DC)

IFP

IFSM

I2t

Tj

Tstg

TOR

Vdis

Note

(Note 1)

(Note 2)

Rating

650

6

60

52

13.5

175

-55 to 175

0.6

2000

Unit

V

A

A2s



Nm

V

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: t = 50 µs

Note 2: f = 50 Hz (half-sine wave t = 10 ms)

5.

5. Thermal Characteristics

Thermal Characteristics

Characteristics

Thermal resistance (junction-to-case)

Thermal resistance (junction-to-ambient)

Symbol

Rth(j-c)

Rth(j-a)

Test Condition



Max

4.24

62.5

Unit

/W

6.

6. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Forward voltage

Reverse current

Junction capacitance

Symbol

VF (1)

VF (2)

IR

Cj

Test Condition

IF = 3 A (pulse measurement)

IF = 6 A (pulse measurement)

VR = 650 V (pulse measurement)

VR = 650 V, f = 1 MHz

Min



Typ.

1.2

1.45

0.3

22

Max



1.6

30



Unit

V

µA

pF

2020-09-28

Rev.5.0

Toshiba Electronic Devices & Storage Corporation

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