TRS12A65F datasheet(1/6 Pages) TOSHIBA

Teilenummer	TRS12A65F

Bauteilbeschribung	SiC Schottky Barrier Diode

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TRS12A65F

1

SiC Schottky Barrier Diode

TRS12A65F

Start of commercial production

2019-02

1.

1. Applications

Applications

•

Power Factor Correction

•

Solar Inverters

•

Uninterruptible Power Supplies

•

DC-DC Converters

2.

2. Features

Features

(1)

Chip design of 2nd generation

(2)

High non-repetitive peak forward surge current: IFSM = 92 A (max)

(3)

Low junction capacitance: Cj = 44 pF (typ.)

(4)

Low reverse current: IR = 0.6 µA (typ.)

(5)

Isolation package: TO-220F-2L

3.

3. Packaging and Internal Circuit

Packaging and Internal Circuit

TO-220F-2L

1: Cathode

2: Anode

2019-06-25

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

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