Datenblatt-Suchmaschine für elektronische Bauteile |
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XPH3R206NC Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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XPH3R206NC Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
2 / 10 page XPH3R206NC 2 4. Absolute Maximum Ratings (Note) (Ta = 25 � unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature (Tc = 25 �) (t = 10 s) (t = 10 s) (Note 1) (Note 1) (Note 2) (Note 3) (Note 4) (Note 5) (Note 5) Symbol VDSS VGSS ID IDP PD EAS IAS Tch Tstg Rating 60 ±20 70 210 132 3.0 0.96 147 70 175 -55 to 175 Unit V A W mJ A � Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal impedance Channel-to-ambient thermal impedance Channel-to-ambient thermal impedance (Tc = 25 �) (t = 10 s) (t = 10 s) (Note 2) (Note 3) Symbol zth(ch-c) zth(ch-a) zth(ch-a) Max 1.13 50 156 Unit �/W Note 1: Ensure that the channel temperature does not exceed 175 �. Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = 48 V, Tch = 25 � (initial), L = 23.1 µH, RG = 25 Ω, IAS = 70 A Note 5: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2020-10-21 Rev.1.0 ©2020 Toshiba Electronic Devices & Storage Corporation |
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