STN4920 datasheet(4/9 Pages) VBSEMI

Teilenummer	STN4920

Bauteilbeschribung	Dual N-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

0.01

0.001

0.1

10

100

TJ = 150 °C

TJ = 25 °C

VSD -Source-to-Drain Voltage (V)

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

ID =5mA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.02

0.04

0.06

0.08

0.10

012

345

67

8

910

TJ = 25 °C

ID = 8 A

TJ = 125 °C

VGS - Gate-to-Source Voltage (V)

0

10

20

30

40

50

0

1

0

.

00.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

0.01

100

1

100

0.01

0.1

1ms

10 ms

0.1

1

10

TA = 25 °C

Single Pulse

Limited byRDS(on)*

1s

10 s

DC

BVDSS Limited

100 ms

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

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STN4920

4

Ähnliche Beschreibung - STN4920

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Vishay Siliconix	SI7212DN	94Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Jun-05
DinTek Semiconductor Co...	DTM4936	294Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4932DY	111Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 22-Dec-08
Vishay Siliconix	SIZ340DT	372Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. B, 24-Mar-14
Analog Power	AM6926NH	398Kb / 5P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4276DY-T1-E3	232Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 11-Apr-11
	SI4276DY	304Kb / 15P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 31-May-10
	SI5906DU	164Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 20-Jul-09
	SI7212DN	549Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET Rev. F, 14-Sep-09
Analog Power	AM4934N	95Kb / 3P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4936ADY	61Kb / 4P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Oct-03

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