1

Power Transistors

2SD1773

Silicon NPN triple diffusion planar type Darlington

For midium speed switching

Complementary to 2SB1193

q

q

High-speed switching

q

Full-pack package which can be installed to the heat sink with

one screw

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

120

120

7

12

8

50

2

150

–55 to +150

Unit

V

V

V

A

A

W

˚C

˚C

Parameter

Collector cutoff current

Collector to base voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

Conditions

min

120

7

1000

typ

20

0.7

6

2

max

100

10

20000

1.5

3

2

3.5

Unit

µA

µA

V

V

V

V

V

V

MHz

µs

µs

µs

Ta=25

°C

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

10.0

±0.2

5.5

±0.2

0.5

+0.2

–0.1

1.4

±0.1

1.3

±0.2

0.8

±0.1

2.54

±0.25

5.08

±0.5

2

13

2.7

±0.2

4.2

±0.2

φ3.1±0.1

Unit: mm

Internal Connection

B

C

E