2SD1892 datasheet(1/3 Pages) PANASONIC

Teilenummer	2SD1892

Bauteilbeschribung	Silicon NPN triple diffusion planar type Darlington(For power amplification)

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Hersteller	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Power Transistors

2SD1892

Silicon NPN triple diffusion planar type Darlington

For power amplification

Complementary to 2SB1252

s Features

q

Optimum for 35W HiFi output

q

High foward current transfer ratio hFE: 5000 to 30000

q

Low collector to emitter saturation voltage VCE(sat): <2.5V

q

Full-pack package which can be installed to the heat sink with

one screw

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

120

100

5

8

5

45

2

150

–55 to +150

Unit

V

A

W

˚C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

ICEO

IEBO

VCEO

hFE1

hFE2

*

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = 120V, IE = 0

VCE = 100V, IB = 0

VEB = 5V, IC = 0

IC = 30mA, IB = 0

VCE = 5V, IC = 1A

VCE = 5V, IC = 4A

IC = 4A, IB = 4mA

VCE = 10V, IC = 0.5A, f = 1MHz

IC = 4A, IB1 = 4mA, IB2 = –4mA,

VCC = 50V

min

100

2000

5000

typ

20

2.5

3.5

1.0

max

100

30000

2.5

3.0

Unit

µA

V

MHz

µs

*h

FE2 Rank classification

Rank

Q

P

hFE2

5000 to 15000 8000 to 30000

TC=25°C

Ta=25

°C

Unit: mm

Internal Connection

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

10.0

±0.2

5.5

±0.2

0.5

+0.2

–0.1

1.4

±0.1

1.3

±0.2

0.8

±0.1

2.54

±0.25

5.08

±0.5

2

13

2.7

±0.2

4.2

±0.2

φ3.1±0.1

B

E

C

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