Datenblatt-Suchmaschine für elektronische Bauteile |
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NE3508M04 Datenblatt(PDF) 2 Page - California Eastern Labs |
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NE3508M04 Datenblatt(HTML) 2 Page - California Eastern Labs |
2 / 11 page NE3508M04 RECOMMENDED OPERATING CONDITIONS(TA = +25 °C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Drain to Source Voltage VDS --- 2 3 V I t n e r r u C n i a r D D --- 10 30 mA m B d 0 - - - - - - n i P r e w o P t u p n I ELECTRICAL CHARACTERISTICS TA = +25 °C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Gate to Source Leak Current IGSO VGS=-3V --- 1 20 µA Saturated Drain Current IDSS VDS=2V, VGS=0V 60 90 120 mA Gate to Source Cutoff Voltage VGS(off) VDS=2V, ID=100 µA -0.35 -0.5 -0.65 V Trans conductance gm VDS=2V, ID=10mA 100 --- --- mS - - - F N e r u g i F e s i o N 0.45 0.9 dB a G n i a G d e t a i c o s s A VDS=2V, ID=10mA f 2GHz 12 14 --- dB Output Power at 1dB Gain Compression Point Po(1dB) VDS=3V, ID=30mA(Non-RF) f 2GHz --- 18 --- dBm The information in this document is subject to change without notice. PRELIMINARY PRODUCT INFORMATION |
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