Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD0814 Datenblatt(PDF) 1 Page - Panasonic Semiconductor |
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2SD0814 Datenblatt(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification s Features q High collector to emitter voltage VCEO. q Low noise voltage NV. q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.65 ±0.15 0.65 ±0.15 3 1 2 0.4 ±0.2 0.1 to 0.3 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 150 185 150 185 5 100 50 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 2SD814 2SD814A 2SD814 2SD814A s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage Symbol ICBO VCEO VEBO hFE * VCE(sat) fT Cob NV Conditions VCB = 100V, IE = 0 IC = 100µA, IB = 0 IE = 10µA, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min 150 185 5 90 typ 150 2.3 150 max 1 330 1 Unit µA V V V MHz pF mV 2SD814 2SD814A *h FE Rank classification Rank Q R S hFE 90 ~ 155 130 ~ 220 185 ~ 330 2SD814 PQ PR PS 2SD814A LQ LR LS Marking symbol : P(2SD814) L(2SD814A) Marking Symbol |
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