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for use in life-support devices and/or systems.
Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-103754 Rev D
Preliminary
The SLD2083CZ is a 10 Watt high performance
LDMOS transistor designed for operation to
2700MHz. It is an excellent solution for applica-
tions requiring high linearity and efficiency at a
low cost. The SLD2083CZ is typically used in
the design of driver stages for power amplifiers,
repeaters, and RFID applications. The power
transistor is fabricated using Sirenza’s high per-
formance XeMOS IITM process.
RF Specifications
Parameter
Description: Test Conditions in Sirenza Evaluation
Board VDS = 28.0V, IDQ = 125mA, TFlange = 25ºC
Unit
Min
Typ
Max
Frequency
Frequency of Operation
MHz
-
-
2700
Gain
10 Watt CW, 902MHz-928MHz
dB
17
18
-
Efficiency
Drain Efficiency at 10 Watt CW, 915MHz
%
40
47
-
IRL
Input Return Loss, 10 Watt Output Power, 915MHz
dB
-
-15
-10
Linearity
3rd Order IMD at 10 Watt PEP (Two Tone), 915MHz
dBc
-
-28
-26
1dB Compression (P1dB), 915MHz
Watt
10
11
-
ACPR=-55dB, IS-95
Watt
1.8
1.6
-
ACPR=-45dB, IS-95
Watt
3.2
3.6
-
Functional Schematic Diagram
SLD2083CZ
10 Watt Discrete LDMOS Device
Ceramic Package
Product Features
Applications
• 10 Watt Output P
1dB
• Single Polarity Supply Voltage
• High Gain: 18 dB Typical
• High Efficiency
• Advanced, XeMOS II LDMOS
• Integrated ESD Protection, Class 1A
• Base Station PA driver
• Repeater
• RFID
Product Description
Case Flange = Ground
ESD
Protection
Pb
RoHS Compliant
&
Package
Green