Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK2571 Datenblatt(PDF) 1 Page - Panasonic Semiconductor |
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2SK2571 Datenblatt(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Power F-MOS FETs unit: mm 2SK2571 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 1: Gate 2: Drain 3: Source TOP-3E Package s Electrical Characteristics (T C = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Ciss Coss Crss ton tf td(off) Rth(ch-c) Rth(ch-a) Conditions VDS = 360V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 7A VDS = 25V, ID = 7A IDR = 13A, VGS = 0 VDS = 20V, VGS = 0, f = 1MHz VDD = 150V, ID = 7A VGS = 10V, RL = 21.4Ω min 450 2 5 typ 0.34 8 1700 300 120 110 90 220 max 100 ±1 5 0.45 −2 1.25 41.67 Unit µA µA V V Ω S V pF pF pF ns ns ns °C/W °C/W s Absolute Maximum Ratings (T C = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 ±30 ±13 ±26 200 100 3 150 −55 to +150 Unit V V A A mJ W °C °C * L = 2.4mH, IL = 13A, 1 pulse 15.5±0.5 3.0±0.3 φ3.2±0.1 5.45±0.3 123 5.45±0.3 1.1±0.1 2.0±0.2 4.0 5˚ 5˚ 5˚ 5˚ 5˚ 5˚ 0.7±0.1 |
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