2SK3046 datasheet(1/3 Pages) PANASONIC

Teilenummer	2SK3046

Bauteilbeschribung	Silicon N-Channel Power F-MOS FET

Download	3 Pages

Scroll/Zoom	100%

Hersteller	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

Logo

1 / 3 page

1

Power F-MOS FETs

unit: mm

2SK3046

Silicon N-Channel Power F-MOS FET

s Features

q Avalanche energy capacity guaranteed: EAS > 130mJ

q V

GSS = ±30V guaranteed

q High-speed switching: t

f = 60ns

q No secondary breakdown

s Applications

q Contactless relay

q Diving circuit for a solenoid

q Driving circuit for a motor

q Control equipment

q Switching power supply

s Electrical Characteristics (T

C = 25°C)

Parameter

Drain to Source cut-off current

Gate to Source leakage current

Drain to Source breakdown voltage

Gate threshold voltage

Drain to Source ON-resistance

Forward transfer admittance

Diode forward voltage

Input capacitance (Common Source)

Output capacitance (Common Source)

Reverse transfer capacitance (Common Source)

Turn-on time (delay time)

Rise time

Turn-off time (delay time)

Fall time

Symbol

IDSS

IGSS

VDSS

Vth

RDS(on)

| Yfs |

VDSF

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Conditions

VDS = 400V, VGS = 0

VGS = ±30V, VDS = 0

ID = 1mA, VGS = 0

VDS = 25V, ID = 1mA

VGS = 10V, ID = 4A

VDS = 25V, ID = 4A

IDR = 7A, VGS = 0

VDS = 20V, VGS = 0, f = 1MHz

VGS = 10V, ID = 5A

VDD = 150V, RL = 30Ω

min

500

2

3

typ

0.7

5

1200

160

70

30

70

140

60

max

0.1

±1

5

1

−1.6

Unit

mA

µA

V

Ω

S

V

pF

ns

s Absolute Maximum Ratings (T

C = 25°C)

Parameter

Drain to Source breakdown voltage

Gate to Source voltage

Drain current

Avalanche energy capacity

Allowable power

dissipation

Channel temperature

Storage temperature

DC

Pulse

TC = 25°C

Ta = 25°C

Symbol

VDSS

VGSS

ID

IDP

EAS*

PD

Tch

Tstg

Ratings

500

±30

±7

±14

130

40

2

150

−55 to +150

Unit

V

A

mJ

W

°C

*

L = 5.4mH, IL = 7A, 1 pulse

1

9.9±0.3

4.6±0.2

2.9±0.2

0.8±0.1

1.4±0.2

23

φ3.2±0.1

2.6±0.1

0.55±0.15

2.54±0.3

5.08±0.5

1.6±0.2

1: Gate

2: Drain

3: Source

TO-220D Package

Ähnliche Beschreibung - 2SK3046

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Panasonic Semiconductor	2SK867	41Kb / 1P	Silicon N-channel Power F-MOS FET
	2SK996	64Kb / 1P	Silicon N-channel Power F-MOS FET
	2SK1266	80Kb / 2P	Silicon N-channel Power F-MOS FET
	2SK2125	46Kb / 3P	Silicon N-Channel Power F-MOS FET
	2SK2128	45Kb / 3P	Silicon N-Channel Power F-MOS FET
	2SK3030	24Kb / 1P	Silicon N-Channel Power F-MOS FET
	2SK3031	24Kb / 1P	Silicon N-Channel Power F-MOS FET
	2SK3033	24Kb / 1P	Silicon N-Channel Power F-MOS FET
	2SK3036	23Kb / 1P	Silicon N-Channel Power F-MOS FET
	2SK3043	45Kb / 3P	Silicon N-Channel Power F-MOS FET
	PUB4702	34Kb / 2P	Silicon N-Channel Power F-MOS FET

More results

2SK3046 Datenblatt(PDF) 1 Page - Panasonic Semiconductor

2SK3046 Datenblatt(HTML) 1 Page - Panasonic Semiconductor

Ähnliche Teilenummer - 2SK3046

Ähnliche Beschreibung - 2SK3046

Html Pages

1 2 3

Datenblatt Download

Link URL