Datenblatt-Suchmaschine für elektronische Bauteile |
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STGB6NB60HD Datenblatt(PDF) 2 Page - STMicroelectronics |
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STGB6NB60HD Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 10 page 1 Electrical ratings STGB6NB60HD 2/10 1 Electrical ratings Table 1. Absolute maximum ratings Table 2. Thermal resistance Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V IC Collector Current (continuous) at 25°C 12 A IC Collector Current (continuous) at 100°C 6 A ICM Note 1 Collector Current (pulsed) 48 A VGE Gate-Emitter Voltage ± 20 V PTOT Total Dissipation at TC = 25°C 80 W Tj Operating Junction Temperature – 65 to 150 °C Tstg Storage Temperature Min. Typ. Max. Unit Rthj-case Thermal Resistance Junction-case 1.56 °C/W Rthj-amb Thermal Resistance Junction-ambient 62.5 °C/W Rthc-h Thermal Resistance case-hetsink 0.5 °C/W |
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