STP12NK60Z datasheet(3/12 Pages) STMICROELECTRONICS

Teilenummer	STP12NK60Z

Bauteilbeschribung	N-CHANNEL 600V - 0.53 Ohm - 10A TO-220 / TO-220FP Zener-Protected SuperMESH?줞OSFET

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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STP12NK60Z - STF12NK60Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 7: On/Off

Table 8: Dynamic

Table 9: Source Drain Diode

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 1 mA, VGS = 0

600

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 100 µA

3

3.75

4.5

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V, ID = 5 A

0.53

0.64

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =10 V, ID = 5 A

9

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

1740

195

49

pF

Coss eq. (3)

Equivalent Output

Capacitance

VGS = 0V, VDS = 0V to 480 V

101

pF

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 300 V, ID = 5 A

RG = 4.7Ω VGS = 10 V

(see Figure 19)

22.5

18.5

55

31.5

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 480 V, ID = 10 A,

VGS = 10 V

(see Figure 22)

59

10

32

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

10

40

A

VSD (1)

Forward On Voltage

ISD = 10 A, VGS = 0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 10 A, di/dt = 100 A/µs

VDD = 50 V, Tj = 25°C

(see test circuit, Figure 5)

358

3

17

ns

µC

A

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 10 A, di/dt = 100 A/µs

VDD = 50 V, Tj = 150°C

(see test circuit, Figure 5)

460

4.2

18.2

ns

µC

A

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