Datenblatt-Suchmaschine für elektronische Bauteile |
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SM08G43 Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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SM08G43 Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page SM08G43 2001-07-10 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Repetitive Peak Off−State Current IDRM VDRM = Rated ― ― 10 µA I (1+) T2 (+) , Gate (+) ― ― ― II (1−) T2 (+) , Gate (−) ― ― 1.5 III (3−) T2 (−) , Gate (−) ― ― 1.5 Gate Trigger Voltage IV (3+) VGT T2 (−) , Gate (+) ― ― ― V I (1+) T2 (+) , Gate (+) ― ― ― II (1−) T2 (+) , Gate (−) ― ― 3 III (3−) T2 (−) , Gate (−) ― ― 3 Gate Trigger Current IV (3+) IGT VD = 12V, RL = 20Ω T2 (−) , Gate (+) ― ― ― mA Peak On−State Voltage VTM ITM = 1.2A ― ― 1.5 V Gate Non−Trigger Voltage VGD VD = Rated, Tc = 125°C 0.2 ― ― V Holding Current IH VD = 12V, Gate Open ― ― 10 mA Thermal Resistance Rth (j−c) Junction to Case ― ― 50 °C / W Thermal Resistance Rth (j−a) Junction to Ambient ― ― 220 °C / W MARKING NUMBER SYMBOL MARK *1 TYPE SM08G43 M08G *2 Example 8A: January 1998 8B: February 1998 8L: December 1998 |
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