Datenblatt-Suchmaschine für elektronische Bauteile |
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LM3205SDX-2 Datenblatt(PDF) 6 Page - National Semiconductor (TI) |
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LM3205SDX-2 Datenblatt(HTML) 6 Page - National Semiconductor (TI) |
6 / 18 page Note 12: Ripple voltage should measured at COUT electrode on good layout PC board and under condition using suggested inductors and capacitors. Note 13: National Semiconductor recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper ESD handling techniques can result in damage. Typical Performance Characteristics (Circuit in Figure 3,PV IN =VDD = EN = 3.6V, L = 3.3uH, DCR of L ≤ 100mΩ,C IN = 10uF, 0603, 6.3V ( 4.7uF||4.7uF, 0603, 6.3V can be used), COUT = 4.7uF, 0603, 6.3V for LM3205TL/ LM3205SD unless otherwise noted) Quiescent Current vs Supply Voltage (V CON = 2V, FB = 0V, No Switching) Shutdown Current vs Temperature (V CON = 0V, EN = 0V) 20158055 20158056 Switching Frequency Variation vs Temperature (V OUT = 1.3V, IOUT = 200mA) Output Voltage vs Supply Voltage (V OUT = 1.3V) 20158057 20158058 www.national.com 6 |
Ähnliche Teilenummer - LM3205SDX-2 |
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Ähnliche Beschreibung - LM3205SDX-2 |
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