Datenblatt-Suchmaschine für elektronische Bauteile |
|
IXZ308N120 Datenblatt(PDF) 2 Page - IXYS Corporation |
|
IXZ308N120 Datenblatt(HTML) 2 Page - IXYS Corporation |
2 / 3 page IXZ308N120 Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. RG 1 Ω Ciss 1960 pF Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz 59 pF Crss 9.2 pF Cstray Back Metal to any Pin 33 pF Td(on) 4 ns Ton VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 Ω (External) 5 ns Td(off) 4 ns Toff 6 ns Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions min. typ. max. IS VGS = 0 V 8 Α ISM Repetitive; pulse width limited by TJM 48 A VSD IF=Is, VGS=0 V, Pulse test, t ≤ 300µs, duty cycle ≤2% 1.5 V Trr TBD ns Source-Drain Diode IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002 |
Ähnliche Teilenummer - IXZ308N120 |
|
Ähnliche Beschreibung - IXZ308N120 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |