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2SD2150-SOT-89 Datenblatt(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

Teilenummer 2SD2150-SOT-89
Bauteilbeschribung  TRANSISTOR NPN)
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Hersteller  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Direct Link  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

2SD2150-SOT-89 Datenblatt(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
2SD2150
TRANSISTOR
NPN
FEATURES
Power dissipation
PCM
:
0.5
W
Tamb=25
Collector current
ICM
:
3
A
Collector-base voltage
V(BR)CBO :
40
V
Operating and storage junction temperature range
TJ
Tstg: -55
to +150
ELECTRICAL
CHARACTERISTICS
Tamb=25
unless
otherwise
specified
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=
50 A,IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=
1mA,IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=50
A,IC=0
6
V
Collector cut-off current
ICBO
VCB=30V,IE=0
0.1
A
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
A
DC current gain
hFE(1)
VCE=2V,IC=0.1A
180
560
Collector-emitter saturation voltage
VCE(sat)
IC=2A,IB=100mA
0.5
V
Transition frequency
fT
VCE=2V,IC=0.5A ,f=100MHz
290
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
25
pF
CLASSIFICATION OF
hFE(1)
Rank
Q
R
S
Range
120-270
180-390
270-560
Marking
CFQ
CFR
CFS
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3


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