SDA16A datasheet(6/16 Pages) NSC

Teilenummer	SDA16A

Bauteilbeschribung	Active Clamp Voltage Mode PWM Controller

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Hersteller	NSC [National Semiconductor (TI)]

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Electrical Characteristics (Continued)

Specifications with standard typeface are for T

J = 25˚C, and those with boldface type apply over full Operating Junction

Temperature range.V

IN = 48V, VCC = 10V, RT = 26.7k

Ω,R

SET = 27.4k

Ω) unless otherwise stated (Note 3)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

CS2 Sink Impedance

(Post Fault Discharge)

CS2 = 0.6V

55

95

Ω

CS1 and CS2

Leakage Current

CS = CS Threshold -

100mV

1

µA

Soft-Start

Soft-start Current

Source Normal

17

22

27

µA

Soft-start Current

Source following a

CS2 event

0.5

1

1.5

µA

Oscillator

Frequency1

T

A = 25˚C

T

J =Tlow to Thigh

180

175

200

220

225

kHz

Frequency2

RT = 13.3 k

Ω

400

kHz

T

J =Tlow to Thigh

360

440

T

J = 0˚C to 125˚C

364

436

Sync threshold

2

V

Min Sync Pulse Width

100

ns

Sync Frequency

Range

160

kHz

PWM Comparator

Delay to Output

COMP step 5V to 0V

Time to onset of OUT_A

transition low

40

ns

Maximum Duty Cycle

1

Measured at OUT_A

73

%

Maximum Duty Cycle

2

Measured at OUT_A;

RT = 13.3K

66

71

75

COMP to PWM Offset

0.75

1

1.15

V

COMP Input Current

COMP = 4V, SS open

50

80

µA

Volt x Second Clamp

Ramp Clamp Level

Delta RAMP measured

from onset of OUT_A to

Ramp peak.

COMP = 5V

2.4

2.5

2.6

V

UVLO Shutdown

Undervoltage

Shutdown Threshold

2.44

2.5

2.56

V

Undervoltage

Shutdown Hysteresis

16

20

24

µA

Output Section

OUT_A High

Saturation

MOS Device @ Iout =

-10mA,

5

10

Ω

OUTPUT_A Peak

Current Sink

Bipolar Device @ Vcc/2

3

A

OUT_A Low

Saturation

MOS Device @ Iout =

10mA,

6

9

Ω

OUTPUT_A Rise Time

C

gate = 2.2nF

20

ns

OUTPUT_A Fall Time

C

gate = 2.2nF

15

ns

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