Datenblatt-Suchmaschine für elektronische Bauteile |
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N01L163WN1A Datenblatt(PDF) 1 Page - NanoAmp Solutions, Inc. |
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N01L163WN1A Datenblatt(HTML) 1 Page - NanoAmp Solutions, Inc. |
1 / 10 page NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N01L163WN1A (DOC# 14-02-011 REV G ECN# 01-1272) 1 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L163WN1A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N01L163WN1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 64Kb x 16 SRAMs. Features • Single Wide Power Supply Range 2.3 to 3.6 Volts • Very low standby current 2.0µA at 3.0V (Typical) • Very low operating current 2.0mA at 3.0V and 1µs (Typical) • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical) • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.8V • Very fast output enable access time 30ns OE access time • Automatic power down to standby mode • TTL compatible three-state output driver • Compact space saving BGA package avail- able Pin Configurations Product Family Part Number Package Type Operating Temperature Power Supply (Vcc) Speed Standby Current (ISB), Typical Operating Current (Icc), Typical N01L163WN1AB 48 - BGA -40oC to +85oC 2.3V - 3.6V 55ns @ 2.7V 70ns @ 2.3V 2 µA2 mA @ 1MHz N01L163WN1AT 44 - TSOP II N01L163WN1AB2 48 - BGA Green N01L163WN1AT2 44 - TSOP II Green PIN ONE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A15 A14 A13 A12 NC 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC 12 34 56 A LB OE A0 A1 A2 NC B I/O8 UB A3 A4 CE I/O0 C I/O9 I/O10 A5 A6 I/O1 I/O2 D VSS I/O11 NC A7 I/O3 VCC E VCC I/O12 NC NC I/O4 VSS F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 NC A12 A13 WE I/O7 H NC A8 A9 A10 A11 NC 48 Pin BGA (top) 6 x 8 mm Pin Descriptions Pin Name Pin Function A0-A15 Address Inputs WE Write Enable Input CE Chip Enable Input OE Output Enable Input LB Lower Byte Enable Input UB Upper Byte Enable Input I/O0-I/O15 Data Inputs/Outputs NC Not Connected VCC Power VSS Ground |
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